Free delivery with Speedy within Bulgaria over € 75 / up to 30 kg.

EN

Products

Your cart is empty

Transistor IRFP260 N MOS-FET 200 V, 50 A, 0.04 Ohm, 300 W

Transistor IRFP260 N MOS-FET 200 V, 50 A, 0.04 Ohm, 300 W

Transistor IRFP260 N MOS-FET 200 V, 50 A, 0.04 Ohm, 300 W.

Manufacturer:

INTERNATIONAL RECTIFIER

Model:

IRFP260

Weight:

0.006 Kgs

Availability

Available online

906 pcs.

On site in Vikiwat shop

the price on site may be different

7 pcs.

See quantities

€ 5.06 / 9.90 лв

SKU: 5668

Specifications Files Reviews

Report an error

Specifications

Technical parameters of Transistor IRFP260 N MOS-FET 200 V, 50 A, 0.04 Ohm, 300 W

Brand:

INTERNATIONAL RECTIFIER

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

200 [V]

Maximum drain current:

50 [A]

Operating temperature:

-55~175 [°C]

Drain-source resistance at 25°С:

0.04 [ohm]

Power Pd:

300 [W]

Housing:

TO-247AC

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRFP260

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRFP260 N MOS-FET 200 V, 50 A, 0.04 Ohm, 300 W

Technical Data (EN) PDF, 122.63 KB

Reviews

In order to write a review or rate this product you must be a registered user.

Thank you for helping us improve your user experience on our site.

Transistor IRFP260 N MOS-FET 200 V, 50 A, 0.04 Ohm, 300 W

SKU

5668

Manufacturer / Model

INTERNATIONAL RECTIFIER / IRFP260

Please indicate the error you encountered.

Technical characteristics

Product description

Product image

Technical documentation (files)

Other

Your comment Your email address *

Antispam verification:

Recently viewed products

Electromagnetic relay G5V-2, with coil 12VDC, 125VAC / 0.5A

Delete recently viewed