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Transistor 2SJ162 MOS-P-FEТ 160 V, 7 A, 100 W, TO3P/2SK1058

Name: Transistor 2SJ162 MOS-P-FEТ 160 V, 7 A, 100 W, TO3P/2SK1058
SKU: 13337
Price: 18.12 BGN
Availability: InStock
Rating: 4.0000 (1 reviews)

Model:

2SJ162

Weight:

0.010 Kgs

Availability

Qty

Delivery time

In Stock

48 h

Vikiwat Store

shop purchase

In stock

BGN 18.12 VAT Incl.

Prices for quantities (VAT Incl.)

Quantity	1+	3+
List Price	BGN 18.12	BGN 17.21

SKU: 13337

Specifications Files Reviews

Specifications

Technical parameters of Transistor 2SJ162 MOS-P-FEТ 160 V, 7 A, 100 W, TO3P/2SK1058

Transistor type:

P-MOSFET

Maximum voltage drain-source Uds:

160 [V]

Maximum drain current:

7 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

0.3 [ohm]

Power Pd:

100 [W]

Housing:

TO-3P

Maximum voltage gate-source Ugs:

±15 [V]

Model:

2SJ162

Mounting:

THT

Diode:

diode and zener diode

Files

Technical documentation of Transistor 2SJ162 MOS-P-FEТ 160 V, 7 A, 100 W, TO3P/2SK1058

2SJ162 PDF, 71.1 KB

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