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Transistor 2SJ162 MOS-P-FEТ 160 V, 7 A, 100 W, TO3P/2SK1058

Transistor 2SJ162 MOS-P-FEТ 160 V, 7 A, 100 W, TO3P/2SK1058

Transistor 2SJ162 MOS-P-FEТ 160 V, 7 A, 100 W, TO3P/2SK1058

Model:

2SJ162

Weight:

0.011 Kgs

Availability

Available online

24 pcs.

On site in Vikiwat shop

the price on site may be different

out of stock

See quantities

BGN 14.50 VAT Incl.

Prices for quantities (VAT Incl.)

1+

BGN 14.50

3+

BGN 13.78

SKU: 13337

Specifications Files Reviews

Specifications

Technical parameters of Transistor 2SJ162 MOS-P-FEТ 160 V, 7 A, 100 W, TO3P/2SK1058

Transistor type:

P-MOSFET

Maximum voltage drain-source Uds:

160 [V]

Maximum drain current:

7 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

0.3 [ohm]

Power Pd:

100 [W]

Housing:

TO-3P

Maximum voltage gate-source Ugs:

±15 [V]

Model:

2SJ162

Mounting:

THT

Diode:

diode and zener diode

Files

Technical documentation of Transistor 2SJ162 MOS-P-FEТ 160 V, 7 A, 100 W, TO3P/2SK1058

2SJ162 PDF, 71.1 KB

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