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Transistor 2SJ162 MOS-P-FEТ 160 V, 7 A, 100 W, TO3P/2SK1058

Transistor 2SJ162 MOS-P-FEТ 160 V, 7 A, 100 W, TO3P/2SK1058

Transistor 2SJ162 MOS-P-FEТ 160 V, 7 A, 100 W, TO3P/2SK1058

Model:

2SJ162

Weight:

0.011 Kgs

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for a total cart value over € 50

Availability

Available online

24 pcs.

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out of stock

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Possible speedy APS

-15%

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€ 6.30 / 12.32 лв

~~€ 7.41~~

The offer is valid from 22.06.2026 to 22.06.2026

Buy on installment with tbi bank

for a total cart value over € 50

SKU: 13337

Specifications Files Reviews

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Specifications

Technical parameters of Transistor 2SJ162 MOS-P-FEТ 160 V, 7 A, 100 W, TO3P/2SK1058

Transistor type:

P-MOSFET

Maximum voltage drain-source Uds:

160 [V]

Maximum drain current:

7 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

0.3 [ohm]

Power Pd:

100 [W]

Housing:

TO-3P

Maximum voltage gate-source Ugs:

±15 [V]

Model:

2SJ162

Mounting:

THT

Diode:

diode and zener diode

Files

Technical documentation of Transistor 2SJ162 MOS-P-FEТ 160 V, 7 A, 100 W, TO3P/2SK1058

2SJ162 PDF, 71.1 KB

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Transistor 2SJ162 MOS-P-FEТ 160 V, 7 A, 100 W, TO3P/2SK1058

SKU

13337

Model

2SJ162

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