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Transistor, 1200V, 45A, 200W, N-IGBT

Transistor 1200V

Transistor IGBT with integrated ultra fast diode, maximum collector-emitter voltage 1200 V and THT mounting.

Manufacturer:

INFINEON

Model:

IRG4PH50KD

Weight:

0.011 Kgs

Availability

Out of stock online

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out of stock

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€ 10.27

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SKU: 13359

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Specifications

Technical parameters of Transistor, 1200V, 45A, 200W, N-IGBT

Brand:

INFINEON

Transistor type:

N-IGBT

Maximum voltage collector-emitter Uceo:

1200 [V]

Maximum collector current Ic:

45 [A]

Power:

200 [W]

Housing:

TO-247AC

Diode:

yes

Mounting:

THT

Model:

IRG4PH50KD

Operating temperature:

-55~150 [°C]

Maximum collector current at 100°C:

24 [A]

Files

Technical documentation of Transistor, 1200V, 45A, 200W, N-IGBT

Technical data (EN) PDF, 226.8 KB

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Transistor, 1200V, 45A, 200W, N-IGBT

SKU

13359

Manufacturer / Model

INFINEON / IRG4PH50KD

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