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Transistor STGE200NB60S IGBT 600 V, 150 A, 112 ns Vce-1.2 V ISOTOP

Transistor STGE200NB60S IGBT 600 V, 150 A, 112 ns Vce-1.2 V ISOTOP

Transistor STGE200NB60S IGBT 600 V, 150 A, 112 ns Vce-1.2 V ISOTOP

Manufacturer:

ST MICROELECTRONICS

Model:

STGE200NB60S

Weight:

0.017 Kgs

Availability

Out of stock online

On site in Vikiwat shop

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out of stock

Possible speedy APS

€ 51.68 / 101.08 лв

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SKU: 21654

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Specifications

Technical parameters of Transistor STGE200NB60S IGBT 600 V, 150 A, 112 ns Vce-1.2 V ISOTOP

Brand:

ST MICROELECTRONICS

Transistor type:

N-IGBT

Maximum voltage collector-emitter Uceo:

600 [V]

Maximum collector current Ic:

200 [A]

Power:

600 [W]

Housing:

ISOTOP

Diode:

no

Mounting:

secure

Model:

STGE200NB60S

Operating temperature:

-55~150 [°C]

Maximum collector current at 100°C:

150 [A]

Files

Technical documentation of Transistor STGE200NB60S IGBT 600 V, 150 A, 112 ns Vce-1.2 V ISOTOP

Data sheet STGE200NB60S IGBT 600V 150A PDF, 271.09 KB

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Transistor STGE200NB60S IGBT 600 V, 150 A, 112 ns Vce-1.2 V ISOTOP

SKU

21654

Manufacturer / Model

ST MICROELECTRONICS / STGE200NB60S

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