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Transistor STGE200NB60S IGBT 600 V, 150 A, 112 ns Vce-1.2 V ISOTOP

Transistor STGE200NB60S IGBT 600 V, 150 A, 112 ns Vce-1.2 V ISOTOP

Transistor STGE200NB60S IGBT 600 V, 150 A, 112 ns Vce-1.2 V ISOTOP

Manufacturer:

ST MICROELECTRONICS

Model:

STGE200NB60S

Weight:

0.015 Kgs

Availability

Out of stock online

On site in Vikiwat shop

the price on site may be different

out of stock

BGN 101.07 VAT Incl.

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Prices for quantities (VAT Incl.)

1+

BGN 101.07

3+

BGN 96.02

5+

BGN 90.96

SKU: 21654

Specifications Files Reviews

Specifications

Technical parameters of Transistor STGE200NB60S IGBT 600 V, 150 A, 112 ns Vce-1.2 V ISOTOP

Brand:

ST MICROELECTRONICS

Transistor type:

N-IGBT

Maximum voltage collector-emitter Uceo:

600 [V]

Maximum collector current Ic:

200 [A]

Power:

600 [W]

Housing:

ISOTOP

Diode:

no

Mounting:

secure

Model:

STGE200NB60S

Operating temperature:

-55~150 [°C]

Maximum collector current at 100°C:

150 [A]

Files

Technical documentation of Transistor STGE200NB60S IGBT 600 V, 150 A, 112 ns Vce-1.2 V ISOTOP

Data sheet STGE200NB60S IGBT 600V 150A PDF, 271.09 KB

Reviews

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