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Transistor 2SK727 MOS-N-FET 900 V ,5 A, 125 W, 2.5 Оhm

Transistor 2SK727 MOS-N-FET 900 V ,5 A, 125 W, 2.5 Оhm - 1

Transistor 2SK727 MOS-N-FET 900 V ,5 A, 125 W, 2.5 Оhm - 2

Transistor 2SK727 MOS-N-FET 900 V ,5 A, 125 W, 2.5 Оhm - 1

Transistor 2SK727 MOS-N-FET 900 V ,5 A, 125 W, 2.5 Оhm

Model:

2SK727

Weight:

0.011 Kgs

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Availability

Available online

32 pcs.

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Possible speedy APS

-14%

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€ 1.28

~~€ 1.49~~

The offer is valid from 04.09.2026 to 04.09.2026

Buy on installment with tbi bank

for a total cart value over € 50

SKU: 4980

Specifications Files Reviews

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Specifications

Technical parameters of Transistor 2SK727 MOS-N-FET 900 V ,5 A, 125 W, 2.5 Оhm

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

900 [V]

Maximum drain current:

5 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

2 [ohm]

Power Pd:

125 [W]

Housing:

SC-65

Maximum voltage gate-source Ugs:

±20 [V]

Model:

2SK727

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor 2SK727 MOS-N-FET 900 V ,5 A, 125 W, 2.5 Оhm

2SK727 PDF, 36.41 KB

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Category: MOSFET

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Transistor 2SK727 MOS-N-FET 900 V ,5 A, 125 W, 2.5 Оhm

SKU

4980

Model

2SK727

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