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Transistor 2SJ598, MOS-P-FET, 60V, 12A, 23W, TO-251

Transistor 2SJ598, MOS-P-FET, 60 V, 12 A, 23 W, TO-251

Transistor 2SJ598, MOS-P-FET with drain-source voltage 60 V and power 23 W.

Model:

2SJ598

Weight:

0.006 Kgs

Availability

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out of stock

€ 1.72 / 3.36 лв

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SKU: 94175

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Specifications

Technical parameters of Transistor 2SJ598, MOS-P-FET, 60V, 12A, 23W, TO-251

Transistor type:

P-MOSFET

Maximum voltage drain-source Uds:

60 [V]

Maximum drain current:

12 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

0.13 [ohm]

Power Pd:

23 [W]

Housing:

TO-251

Maximum voltage gate-source Ugs:

±20 [V]

Model:

2SJ598

Mounting:

THT

Diode:

no

Files

Technical documentation of Transistor 2SJ598, MOS-P-FET, 60V, 12A, 23W, TO-251

Technical data and drawing (EN) PDF, 154.16 KB

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Transistor 2SJ598, MOS-P-FET, 60V, 12A, 23W, TO-251

SKU

94175

Model

2SJ598

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