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Transistor 2SK2611 MOS-N-FET 900 V, 9 A, 1.1 Оhm, 150 W SC65

Transistor 2SK2611 MOS-N-FET 900 V, 9 A, 1.1 Оhm, 150 W SC65

Transistor 2SK2611 MOS-N-FET 900 V, 9 A, 1.1 Оhm, 150 W SC65, with zener diode

Model:

2SK2611

Weight:

0.011 Kgs

Availability

Out of stock online

On site in Vikiwat shop

the price on site may be different

out of stock

€ 8.20 / 16.04 лв

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SKU: 94731

Specifications Files Reviews

Specifications

Technical parameters of Transistor 2SK2611 MOS-N-FET 900 V, 9 A, 1.1 Оhm, 150 W SC65

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

900 [V]

Maximum drain current:

9 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

1.1 [ohm]

Power Pd:

150 [W]

Housing:

SC-65

Maximum voltage gate-source Ugs:

±30 [V]

Model:

2SK2611

Mounting:

THT

Diode:

diode and zener diode

Files

Technical documentation of Transistor 2SK2611 MOS-N-FET 900 V, 9 A, 1.1 Оhm, 150 W SC65

2SK2611 - TOSHIBA Field Effect Transistor Silicon N Channel MOS Type PDF, 415.28 KB

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