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Transistor 2SK3798, MOS-N-FET, 900 V, 4 A, 40 W, 2.5 Ohm

Transistor 2SK3798, MOS-N-FET, 900 V, 4 A, 40 W, 2.5 Ohm

Transistor 2SK3798, MOS-N-FET, 900 V, 4 A, 40 W, 2.5 Ohm

Model:

2SK3798

Weight:

0.011 Kgs

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Availability

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1 pcs.

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€ 2.14

~~€ 2.38~~

The offer is valid from 04.10.2026 to 04.10.2026

Buy on installment with tbi bank

for a total cart value over € 50

SKU: 51070

Specifications Files Reviews

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Specifications

Technical parameters of Transistor 2SK3798, MOS-N-FET, 900 V, 4 A, 40 W, 2.5 Ohm

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

900 [V]

Maximum drain current:

4 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

2.5 [ohm]

Power Pd:

40 [W]

Housing:

TO-220F

Maximum voltage gate-source Ugs:

±30 [V]

Model:

2SK3798

Mounting:

THT

Diode:

diode and zener diode

Files

Technical documentation of Transistor 2SK3798, MOS-N-FET, 900 V, 4 A, 40 W, 2.5 Ohm

2SK3798 PDF, 222.92 KB

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Transistor 2SK3798, MOS-N-FET, 900 V, 4 A, 40 W, 2.5 Ohm

SKU

51070

Model

2SK3798

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