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Transistor 55N10, MOS-N-FET, 100 V, 55 A, 0.021 Оhm, 155 W I-PAK

Name: Transistor 55N10, MOS-N-FET, 100 V, 55 A, 0.021 Оhm, 155 W I-PAK
SKU: 94727
Price: 6.50 BGN
Availability: OutOfStock
Rating: 4.0000 (1 reviews)

Model:

55N10 /FQP/

Weight:

0.005 Kgs

Availability

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SKU: 94727

Specifications Files Reviews

Specifications

Technical parameters of Transistor 55N10, MOS-N-FET, 100 V, 55 A, 0.021 Оhm, 155 W I-PAK

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

100 [V]

Maximum drain current:

55 [A]

Operating temperature:

-55~175 [°C]

Drain-source resistance at 25°С:

0.021 [ohm]

Power Pd:

155 [W]

Housing:

TO-220

Maximum voltage gate-source Ugs:

±25 [V]

Model:

55N10 /FQP/

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor 55N10, MOS-N-FET, 100 V, 55 A, 0.021 Оhm, 155 W I-PAK

55N10 PDF, 1.04 MB

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