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Transistor BF963 MOS-N-FET 20 V, 50 mA, 330 mW, 200 MHz

Transistor BF963 MOS-N-FET 20 V, 50 mA, 330 mW, 200 MHz

Transistor BF963 MOS-N-FET 20 V, 50 mA, 330 mW, 200 MHz

Model:

BF963

Weight:

0.017 Kgs

Availability

Out of stock online

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out of stock

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€ 0.41 / 0.80 лв

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SKU: 4935

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Specifications

Technical parameters of Transistor BF963 MOS-N-FET 20 V, 50 mA, 330 mW, 200 MHz

Transistor type:

N-Dual Gate-MOSFET

Maximum voltage drain-source Uds:

20 [V]

Maximum drain current:

0.05 [A]

Operating temperature:

-55~150 [°C]

Power Pd:

0.2 [W]

Housing:

TO-103

Maximum voltage gate-source Ugs:

±6 [V]

Model:

BF963

Mounting:

THT

Diode:

no

Files

Technical documentation of Transistor BF963 MOS-N-FET 20 V, 50 mA, 330 mW, 200 MHz

BF963 PDF, 59.66 KB

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Category: MOSFET

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Transistor BF963 MOS-N-FET 20 V, 50 mA, 330 mW, 200 MHz

SKU

4935

Model

BF963

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