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Transistor FGH60N60SMD, N-IGBT, 600V, 120A, 300W, TO247, THT

Transistor - 1

Transistor FGH60N60SMD - 2

Transistor FGH60N60SMD, N-IGBT - 3

Transistor FGH60N60SMD type IGBT with collector-emitter voltage 600 V, collector current 120 A and power 300 W.

Manufacturer:

ON SEMICONDUCTOR

Model:

FGH60N60SMD

Weight:

0.006 Kgs

Availability

Available online

19 pcs.

On site in Vikiwat shop

the price on site may be different

8 pcs.

See quantities

-18%

online

BGN 16.32 VAT Incl.

~~BGN 19.90~~ VAT Incl.

The offer is valid from 18.04.2025 to 18.04.2025

Prices for quantities (VAT Incl.)

1+

BGN 16.32

~~BGN 19.90~~

3+

BGN 15.50

~~BGN 18.91~~

5+

BGN 14.69

~~BGN 17.91~~

10+

BGN 13.87

~~BGN 16.92~~

30+

BGN 13.05

~~BGN 15.92~~

SKU: 100662

Description Specifications Files Reviews

Description

Application

The IGBT transistors are three-wire semiconductor elements that consist of a bipolar transistor controlled by an isolated gate field transistor. Transistors of this type are characterized by high input impedance and switching of large currents.

Specifications

Technical parameters of Transistor FGH60N60SMD, N-IGBT, 600V, 120A, 300W, TO247, THT

Brand:

ON SEMICONDUCTOR

Transistor type:

IGBT

Maximum voltage collector-emitter Uceo:

600 [V]

Maximum collector current Ic:

120 [A]

Power:

300 [W]

Housing:

TO247-3

Diode:

no

Mounting:

THT

Model:

FGH60N60SMD

Operating temperature:

-55~175 [°C]

Maximum collector current at 100°C:

60 [A]

Files

Technical documentation of Transistor FGH60N60SMD, N-IGBT, 600V, 120A, 300W, TO247, THT

Datasheet FGH60N60SMD (EN) PDF, 676.38 KB

Reviews

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