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Transistor FGH60N60SMD, N-IGBT, 600V, 120A, 300W, TO247, THT

Transistor - 1

Transistor FGH60N60SMD - 2

Transistor FGH60N60SMD, N-IGBT - 3

Transistor FGH60N60SMD type IGBT with collector-emitter voltage 600 V, collector current 120 A and power 300 W.

Manufacturer:

ON SEMICONDUCTOR

Model:

FGH60N60SMD

Weight:

0.005 Kgs

Availability

Available online

42 pcs.

On site in Vikiwat shop

the price on site may be different

12 pcs.

See quantities

BGN 19.90 VAT Incl.

Prices for quantities (VAT Incl.)

1+

BGN 19.90

3+

BGN 18.91

5+

BGN 17.91

10+

BGN 16.92

30+

BGN 15.92

SKU: 100662

Description Specifications Files Reviews

Description

Application

The IGBT transistors are three-wire semiconductor elements that consist of a bipolar transistor controlled by an isolated gate field transistor. Transistors of this type are characterized by high input impedance and switching of large currents.

Specifications

Technical parameters of Transistor FGH60N60SMD, N-IGBT, 600V, 120A, 300W, TO247, THT

Brand:

ON SEMICONDUCTOR

Transistor type:

IGBT

Maximum voltage collector-emitter Uceo:

600 [V]

Maximum collector current Ic:

120 [A]

Power:

300 [W]

Housing:

TO247-3

Diode:

no

Mounting:

THT

Model:

FGH60N60SMD

Operating temperature:

-55~175 [°C]

Maximum collector current at 100°C:

60 [A]

Files

Technical documentation of Transistor FGH60N60SMD, N-IGBT, 600V, 120A, 300W, TO247, THT

Datasheet FGH60N60SMD (EN) PDF, 676.38 KB

Reviews

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