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Transistor FGH60N60SMD, N-IGBT, 600V, 120A, 300W, TO247, THT

Name: Transistor FGH60N60SMD, N-IGBT, 600V, 120A, 300W, TO247, THT
Brand: ON SEMICONDUCTOR
SKU: 100662
Price: 18.91 BGN
Availability: InStock

Transistor FGH60N60SMD type IGBT with collector-emitter voltage 600 V, collector current 120 A and power 300 W.

Manufacturer:

ON SEMICONDUCTOR

Model:

FGH60N60SMD

Weight:

0.005 Kgs

Availability

Qty

Delivery time

In Stock

48 h

Vikiwat Store

shop purchase

In stock

-5%

online

BGN 18.91 VAT Incl.

~~BGN 19.90~~ VAT Incl.

The offer is valid from 22.01.2025 to 22.01.2025

Prices for quantities (VAT Incl.)

Quantity	1+	3+	5+	10+	30+
Price	BGN 18.91	BGN 17.96	BGN 17.01	BGN 16.07	BGN 15.12
List Price	~~BGN 19.90~~	~~BGN 18.91~~	~~BGN 17.91~~	~~BGN 16.92~~	~~BGN 15.92~~

SKU: 100662

Description Specifications Files Reviews

Description

Application

The IGBT transistors are three-wire semiconductor elements that consist of a bipolar transistor controlled by an isolated gate field transistor. Transistors of this type are characterized by high input impedance and switching of large currents.

Specifications

Technical parameters of Transistor FGH60N60SMD, N-IGBT, 600V, 120A, 300W, TO247, THT

Brand:

ON SEMICONDUCTOR

Transistor type:

IGBT

Maximum voltage collector-emitter Uceo:

600 [V]

Maximum collector current Ic:

120 [A]

Power:

300 [W]

Housing:

TO247-3

Diode:

Mounting:

THT

Model:

FGH60N60SMD

Operating temperature:

-55~175 [°C]

Maximum collector current at 100°C:

60 [A]

Files

Technical documentation of Transistor FGH60N60SMD, N-IGBT, 600V, 120A, 300W, TO247, THT

Datasheet FGH60N60SMD (EN) PDF, 676.38 KB

Reviews

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