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Transistor GT50JR22(STA1,E,S), IGBT, 600V, 44A, 115W, TO3PN

Name: Transistor GT50JR22(STA1,E,S), IGBT, 600V, 44A, 115W, TO3PN
Brand: TOSHIBA
SKU: 118026
Price: 18.80 BGN
Availability: InStock

Transistor GT50JR22(STA1,E,S), IGBT Type, collector-emiter voltage 600V, collector current 44A, power dissipation 115W and TO3PN case.

Manufacturer:

TOSHIBA

Model:

GT50JR22(STA1,E,S)

Weight:

0.005 Kgs

Availability

Qty

Delivery time

In Stock

48 h

Vikiwat Store

shop purchase

In stock

-12%

online

BGN 18.80 VAT Incl.

~~BGN 21.36~~ VAT Incl.

The offer is valid from 22.12.2024 to 22.12.2024

SKU: 118026

Specifications Files Reviews

Specifications

Technical parameters of Transistor GT50JR22(STA1,E,S), IGBT, 600V, 44A, 115W, TO3PN

Brand:

TOSHIBA

Transistor type:

IGBT

Maximum voltage collector-emitter Uceo:

600 [V]

Maximum collector current Ic:

44 [A]

Power:

115 [W]

Housing:

TO3PN

Diode:

Mounting:

THT

Model:

GT50JR22(STA1,E,S)

Files

Technical documentation of Transistor GT50JR22(STA1,E,S), IGBT, 600V, 44A, 115W, TO3PN

Datasheet (EN) PDF, 202.09 KB

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