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Transistor ME15N10-G, N-MOSFET, 0.08ohm, 100V, 14.7A, -55~150°C, 34.7W, TO252, ±20V

Name: Transistor ME15N10-G, N-MOSFET, 0.08ohm, 100V, 14.7A, -55~150°C, 34.7W, TO252, ±20V
SKU: 145165
Price: 2.50 BGN
Availability: OutOfStock

Transistor ME15N10-G type N-MOSFET with drain-source voltage 100 V, drain current 14.7 A, dissipated power 34.7 W and housing TO252.

Model:

ME15N10-G

Weight:

0.001 Kgs

Availability

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SKU: 145165

Specifications Reviews

Specifications

Technical parameters of Transistor ME15N10-G, N-MOSFET, 0.08ohm, 100V, 14.7A, -55~150°C, 34.7W, TO252, ±20V

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

100 [V]

Maximum drain current:

14.7 [A]

Operating temperature:

-55~150 [°C]

Power Pd:

34.7 [W]

Housing:

TO252

Maximum voltage gate-source Ugs:

±20 [V]

Model:

ME15N10-G

Mounting:

SMD

Diode:

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