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Transistor 20N60 MOS-N-FET 600 V, 20 A, 0.15 Ohm, 165 W

Transistor 20N60 MOS-N-FET 600 V, 20 A, 0.15 Ohm, 165 W

Transistor 20N60 MOS-N-FET 600 V, 20 A, 0.15 Ohm, 165 W

Manufacturer:

TOSHIBA

Model:

20N60W

Weight:

0.006 Kgs

Availability

Available online

14 pcs.

On site in Vikiwat shop

the price on site may be different

9 pcs.

See quantities

BGN 6.90 VAT Incl.

Prices for quantities (VAT Incl.)

1+

BGN 6.90

3+

BGN 6.55

5+

BGN 6.20

10+

BGN 5.85

25+

BGN 5.52

SKU: 12702

Specifications Files Reviews

Specifications

Technical parameters of Transistor 20N60 MOS-N-FET 600 V, 20 A, 0.15 Ohm, 165 W

Brand:

TOSHIBA

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

600 [V]

Maximum drain current:

20 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

0.13 [ohm]

Power Pd:

165 [W]

Housing:

TO-247

Maximum voltage gate-source Ugs:

±30 [V]

Model:

20N60W

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor 20N60 MOS-N-FET 600 V, 20 A, 0.15 Ohm, 165 W

20N60 PDF, 176.25 KB

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