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Transistor 20N60 MOS-N-FET 600 V, 20 A, 0.15 Ohm, 165 W

Name: Transistor 20N60 MOS-N-FET 600 V, 20 A, 0.15 Ohm, 165 W
Brand: TOSHIBA
SKU: 12702
Price: 6.90 BGN
Availability: InStock
Rating: 5.0000 (1 reviews)

Manufacturer:

TOSHIBA

Model:

20N60W

Weight:

0.005 Kgs

Availability

Qty

Delivery time

In Stock

48 h

Vikiwat Store

shop purchase

In stock

BGN 6.90 VAT Incl.

Prices for quantities (VAT Incl.)

Quantity	1+	3+	5+	10+	25+
List Price	BGN 6.90	BGN 6.55	BGN 6.20	BGN 5.85	BGN 5.52

SKU: 12702

Specifications Files Reviews

Specifications

Technical parameters of Transistor 20N60 MOS-N-FET 600 V, 20 A, 0.15 Ohm, 165 W

Brand:

TOSHIBA

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

600 [V]

Maximum drain current:

20 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

0.13 [ohm]

Power Pd:

165 [W]

Housing:

TO-247

Maximum voltage gate-source Ugs:

±30 [V]

Model:

20N60W

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor 20N60 MOS-N-FET 600 V, 20 A, 0.15 Ohm, 165 W

20N60 PDF, 176.25 KB

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