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Transistor IRFP250, MOS-N-FET, 200 V, 30 A, 0.085 ohm, 190 W

Transistor IRFP250 MOS-N-FET 200 V, 30 A, 0.075 Ohm, 214 W

Transistor IRFP250 MOS-N-FET 200 V, 30 A, 0.085 Ohm, 190 W

Manufacturer:

INTERNATIONAL RECTIFIER

Model:

IRFP250

Weight:

0.006 Kgs

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for a total cart value over € 50

Availability

Available online

495 pcs.

On site in Vikiwat shop

the price on site may be different

6 pcs.

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Possible speedy APS

€ 3.99

Buy on installment with tbi bank

for a total cart value over € 50

SKU: 4900

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Specifications

Technical parameters of Transistor IRFP250, MOS-N-FET, 200 V, 30 A, 0.085 ohm, 190 W

Brand:

INTERNATIONAL RECTIFIER

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

200 [V]

Maximum drain current:

30 [A]

Operating temperature:

-55~175 [°C]

Drain-source resistance at 25°С:

0.085 [ohm]

Power Pd:

190 [W]

Housing:

TO-247C

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRFP250

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRFP250, MOS-N-FET, 200 V, 30 A, 0.085 ohm, 190 W

tranzistor-irfp250-mos-n-fet-200-v-30-a-0-075-ohm-214-w PDF, 1.43 MB

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Transistor IRFP250, MOS-N-FET, 200 V, 30 A, 0.085 ohm, 190 W

SKU

4900

Manufacturer / Model

INTERNATIONAL RECTIFIER / IRFP250

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