Free delivery with Speedy within Bulgaria over € 75 / up to 30 kg.

EN

Products

Your cart is empty

Transistor IRFP250, MOS-N-FET, 200 V, 30 A, 0.075 ohm, 214 W

Transistor IRFP250 MOS-N-FET 200 V, 30 A, 0.075 Ohm, 214 W

Transistor IRFP250 MOS-N-FET 200 V, 30 A, 0.075 Ohm, 214 W

Manufacturer:

INTERNATIONAL RECTIFIER

Model:

IRFP250

Weight:

0.006 Kgs

Availability

Delivery within 5 days

288 pcs.

On site in Vikiwat shop

the price on site may be different

7 pcs.

See quantities

€ 3.32 / 6.49 лв

SKU: 4900

Specifications Files Reviews

Specifications

Technical parameters of Transistor IRFP250, MOS-N-FET, 200 V, 30 A, 0.075 ohm, 214 W

Brand:

INTERNATIONAL RECTIFIER

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

200 [V]

Maximum drain current:

30 [A]

Operating temperature:

-55~175 [°C]

Drain-source resistance at 25°С:

0.075 [ohm]

Power Pd:

214 [W]

Housing:

TO-247C

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRFP250

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRFP250, MOS-N-FET, 200 V, 30 A, 0.075 ohm, 214 W

tranzistor-irfp250-mos-n-fet-200-v-30-a-0-075-ohm-214-w PDF, 1.43 MB

Reviews

In order to write a review or rate this product you must be a registered user.