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Transistor 2SK2049 MOS-N-FET 60 V, 50A, 80 W, 0.025 Ohm

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0.010 Kgs

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SKU: 4908

Model: 2SK2049
Transistor polarity: N-channel
Drain-source breakdown voltage: 60 V
Gate-source breakdown voltage: ±20 V
Drain-source resistance: 0.025 Ohm
Continuous drain current: 50 A
Power: 80 W
Case: TO-220AB
Mounting: THT

Technical parameters of Transistor 2SK2049 MOS-N-FET 60 V, 50A, 80 W, 0.025 Ohm

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

60 [V]

Maximum drain current:

50 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

0.025 [ohm]

Power Pd:

80 [W]

Housing:

TO-220AB

Maximum voltage gate-source Ugs:

±20 [V]

Model:

2SK2049

Mounting:

THT

Diode:

yes

Technical documentation of Transistor 2SK2049 MOS-N-FET 60 V, 50A, 80 W, 0.025 Ohm

2SK2049 PDF, 205.36 KB

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