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Transistor IRF530, MOS-N-FET, 100V, 17A, 90mOhm, 70W

Transistor IRF530, MOS-N-FET, 100V, 17A, 90mOhm, 70W

Transistor IRF530 MOS-N-FET 100 V, 14 A, 0.18 Ohm, 75 W

Manufacturer:

INTERNATIONAL RECTIFIER

Model:

IRF530

Weight:

0.003 Kgs

Availability

Available online

3040 pcs.

On site in Vikiwat shop

the price on site may be different

10 pcs.

See quantities

-12%

online

BGN 2.10 / 1.07 €

~~BGN 2.39~~

The offer is valid from 02.12.2025 to 02.12.2025

SKU: 4951

Specifications Files Reviews

Specifications

Technical parameters of Transistor IRF530, MOS-N-FET, 100V, 17A, 90mOhm, 70W

Brand:

INTERNATIONAL RECTIFIER

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

100 [V]

Maximum drain current:

17 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

0.09 [ohm]

Power Pd:

70 [W]

Housing:

TO-220AB

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRF530

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRF530, MOS-N-FET, 100V, 17A, 90mOhm, 70W

IRF530 PDF, 188.6 KB

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