Free delivery with Speedy within Bulgaria over € 75 / up to 30 kg.

EN

Products

Your cart is empty

Transistor IRF530, MOS-N-FET, 100V, 17A, 90mOhm, 70W

Transistor IRF530, MOS-N-FET, 100V, 17A, 90mOhm, 70W

Transistor IRF530 MOS-N-FET 100 V, 14 A, 0.18 Ohm, 75 W

Manufacturer:

INTERNATIONAL RECTIFIER

Model:

IRF530

Weight:

0.003 Kgs

Availability

Available online

1796 pcs.

On site in Vikiwat shop

the price on site may be different

10 pcs.

See quantities

€ 1.22 / 2.39 лв

SKU: 4951

Specifications Files Reviews

Report an error

Specifications

Technical parameters of Transistor IRF530, MOS-N-FET, 100V, 17A, 90mOhm, 70W

Brand:

INTERNATIONAL RECTIFIER

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

100 [V]

Maximum drain current:

17 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

0.09 [ohm]

Power Pd:

70 [W]

Housing:

TO-220AB

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRF530

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRF530, MOS-N-FET, 100V, 17A, 90mOhm, 70W

IRF530 PDF, 188.6 KB

Reviews

In order to write a review or rate this product you must be a registered user.

Thank you for helping us improve your user experience on our site.

Transistor IRF530, MOS-N-FET, 100V, 17A, 90mOhm, 70W

SKU

4951

Manufacturer / Model

INTERNATIONAL RECTIFIER / IRF530

Please indicate the error you encountered.

Technical characteristics

Product description

Product image

Technical documentation (files)

Other

Your comment Your email address *

Antispam verification: