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Transistor IRF530, MOS-N-FET, 100V, 17A, 90mOhm, 70W

Transistor IRF530, MOS-N-FET, 100V, 17A, 90mOhm, 70W

Transistor IRF530 MOS-N-FET 100 V, 14 A, 0.18 Ohm, 75 W

Manufacturer:

INTERNATIONAL RECTIFIER

Model:

IRF530

Weight:

0.003 Kgs

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for a total cart value over € 50

Availability

Available online

2777 pcs.

On site in Vikiwat shop

the price on site may be different

8 pcs.

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-10%

online

€ 1.79 / 3.50 лв

~~€ 1.99~~

The offer is valid from 14.07.2026 to 14.07.2026

Buy on installment with tbi bank

for a total cart value over € 50

SKU: 4951

Specifications Files Reviews

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Specifications

Technical parameters of Transistor IRF530, MOS-N-FET, 100V, 17A, 90mOhm, 70W

Brand:

INTERNATIONAL RECTIFIER

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

100 [V]

Maximum drain current:

17 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

0.09 [ohm]

Power Pd:

70 [W]

Housing:

TO-220AB

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRF530

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRF530, MOS-N-FET, 100V, 17A, 90mOhm, 70W

IRF530 PDF, 188.6 KB

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Transistor IRF530, MOS-N-FET, 100V, 17A, 90mOhm, 70W

SKU

4951

Manufacturer / Model

INTERNATIONAL RECTIFIER / IRF530

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