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Transistor BSS123-7-F, MOS-N-FET, 100V, 0.17A, 6 Ohm, 0.3W, SOT23

Transistor BSS123-7-F, MOS-N-FET, 100V, 0.17A, 6 Ohm, 0.3W, SOT23

Transistor BSS123-7-F, MOS-N-FET, 100V, 0.17A, 6 Ohm, 0.3W, SOT23

Manufacturer:

DIODES INCORPORATED

Model:

BSS123-7-F

Weight:

0.001 Kgs

Availability

Available online

1402 pcs.

On site in Vikiwat shop

the price on site may be different

out of stock

See quantities

-70%

online

€ 0.06 / 0.12 лв

~~€ 0.20~~

The offer is valid while stocks last

SKU: 95310

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Specifications

Technical parameters of Transistor BSS123-7-F, MOS-N-FET, 100V, 0.17A, 6 Ohm, 0.3W, SOT23

Brand:

DIODES INCORPORATED

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

100 [V]

Maximum drain current:

0.17 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

6 [ohm]

Power Pd:

0.3 [W]

Housing:

SOT23

Maximum voltage gate-source Ugs:

±20 [V]

Model:

BSS123-7-F

Mounting:

SMD

Diode:

yes

Files

Technical documentation of Transistor BSS123-7-F, MOS-N-FET, 100V, 0.17A, 6 Ohm, 0.3W, SOT23

BSS123-7-F PDF, 367.31 KB

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Transistor BSS123-7-F, MOS-N-FET, 100V, 0.17A, 6 Ohm, 0.3W, SOT23

SKU

95310

Manufacturer / Model

DIODES INCORPORATED / BSS123-7-F

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