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Transistor BF961 MOS-N-FET 20 V, 30 mA, 200 mW, 300 MHz, dual gate

Transistor BF961 MOS-N-FET 20 V, 30 mA, 200 mW, 300 MHz, dual gate

Transistor BF961 MOS-N-FET 20 V, 30 mA, 200 mW, 300 MHz, dual gate

Model:

BF961

Weight:

0.017 Kgs

Availability

Out of stock online

On site in Vikiwat shop

the price on site may be different

out of stock

€ 1.31 / 2.56 лв

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SKU: 4934

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Specifications

Technical parameters of Transistor BF961 MOS-N-FET 20 V, 30 mA, 200 mW, 300 MHz, dual gate

Transistor type:

N-Dual Gate-MOSFET

Maximum voltage drain-source Uds:

20 [V]

Maximum drain current:

0.03 [A]

Operating temperature:

-55~150 [°C]

Power Pd:

0.2 [W]

Housing:

TO-50

Maximum voltage gate-source Ugs:

±14 [V]

Model:

BF961

Mounting:

THT

Diode:

no

Files

Technical documentation of Transistor BF961 MOS-N-FET 20 V, 30 mA, 200 mW, 300 MHz, dual gate

BF961 PDF, 160.93 KB

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Transistor BF961 MOS-N-FET 20 V, 30 mA, 200 mW, 300 MHz, dual gate

SKU

4934

Model

BF961

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