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Transistor BF961 MOS-N-FET 20 V, 30 mA, 200 mW, 300 MHz, dual gate

Name: Transistor BF961 MOS-N-FET 20 V, 30 mA, 200 mW, 300 MHz, dual gate
SKU: 4934
Price: 3.20 BGN
Availability: InStock
Rating: 5.0000 (1 reviews)

Model:

BF961

Weight:

0.015 Kgs

Availability

Qty

Delivery time

In Stock

48 h

Vikiwat Store

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In stock

BGN 3.20 VAT Incl.

Prices for quantities (VAT Incl.)

Quantity	1+	3+	5+	10+	25+
List Price	BGN 3.20	BGN 2.88	BGN 2.72	BGN 2.40	BGN 2.08

SKU: 4934

Specifications Files Reviews

Specifications

Technical parameters of Transistor BF961 MOS-N-FET 20 V, 30 mA, 200 mW, 300 MHz, dual gate

Transistor type:

N-Dual Gate-MOSFET

Maximum voltage drain-source Uds:

20 [V]

Maximum drain current:

0.03 [A]

Operating temperature:

-55~150 [°C]

Power Pd:

0.2 [W]

Housing:

TO-50

Maximum voltage gate-source Ugs:

±14 [V]

Model:

BF961

Mounting:

THT

Diode:

Files

Technical documentation of Transistor BF961 MOS-N-FET 20 V, 30 mA, 200 mW, 300 MHz, dual gate

BF961 PDF, 160.93 KB

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