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Transistor BF961 MOS-N-FET 20 V, 30 mA, 200 mW, 300 MHz, dual gate

Transistor BF961 MOS-N-FET 20 V, 30 mA, 200 mW, 300 MHz, dual gate

Transistor BF961 MOS-N-FET 20 V, 30 mA, 200 mW, 300 MHz, dual gate

Model:

BF961

Weight:

0.017 Kgs

Availability

Available online

12 pcs.

On site in Vikiwat shop

the price on site may be different

out of stock

See quantities

BGN 2.56 VAT Incl.

Prices for quantities (VAT Incl.)

1+

BGN 2.56

3+

BGN 2.30

5+

BGN 2.18

10+

BGN 1.92

25+

BGN 1.66

SKU: 4934

Specifications Files Reviews

Specifications

Technical parameters of Transistor BF961 MOS-N-FET 20 V, 30 mA, 200 mW, 300 MHz, dual gate

Transistor type:

N-Dual Gate-MOSFET

Maximum voltage drain-source Uds:

20 [V]

Maximum drain current:

0.03 [A]

Operating temperature:

-55~150 [°C]

Power Pd:

0.2 [W]

Housing:

TO-50

Maximum voltage gate-source Ugs:

±14 [V]

Model:

BF961

Mounting:

THT

Diode:

no

Files

Technical documentation of Transistor BF961 MOS-N-FET 20 V, 30 mA, 200 mW, 300 MHz, dual gate

BF961 PDF, 160.93 KB

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