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Transistor BF961 MOS-N-FET 20 V, 30 mA, 200 mW, 300 MHz, dual gate

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Transistor BF961 MOS-N-FET 20 V, 30 mA, 200 mW, 300 MHz, dual gate

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Price: BGN 0.70 VAT Incl.

Weight: 0.015 Kgs

Quantity: 134

SKU: 4934

Model: BF961
Transistor polarity: N-channel, dual gate
Maximum frequency: 300 MHz
Drain-source breakdown voltage: 20 V
Gate-source breakdown voltage: 14 V
Continuous drain current/25°C: 30 mA
Maximum operating temperature: 150 C
Power: 0.2 W
Case: TO-50

Transistor type:

N-Dual Gate-MOSFET

Maximum voltage drain-source Uds:

20 [V]

Maximum drain current:

0.03 [A]

Operating temperature:

-55~150 [°C]

Power Pd:

0.2 [W]

Housing:

TO-50

Maximum voltage gate-source Ugs:

±14 [V]

Model:

BF961

Mounting:

THT

Diode:

BF961 PDF, 160.93 KB

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