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Transistor BUZ11 MOS-N-FET 50 V, 33 A, 90 W, 0.03 Ohm

Transistor BUZ11 MOS-N-FET 50 V, 33 A, 90 W, 0.03 Ohm

Transistor BUZ11 MOS-N-FET 50 V, 33 A, 90 W, 0.03 Ohm

Manufacturer:

ON SEMICONDUCTOR

Model:

BUZ11

Weight:

0.006 Kgs

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for a total cart value over € 50

Availability

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56 pcs.

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€ 2.25 / 4.40 лв

~~€ 2.50~~

The offer is valid from 28.05.2026 to 28.05.2026

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SKU: 4865

Specifications Files Reviews

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Specifications

Technical parameters of Transistor BUZ11 MOS-N-FET 50 V, 33 A, 90 W, 0.03 Ohm

Brand:

ON SEMICONDUCTOR

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

50 [V]

Maximum drain current:

33 [A]

Operating temperature:

-55~175 [°C]

Drain-source resistance at 25°С:

0.04 [ohm]

Power Pd:

90 [W]

Housing:

TO-220

Maximum voltage gate-source Ugs:

±20 [V]

Model:

BUZ11

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor BUZ11 MOS-N-FET 50 V, 33 A, 90 W, 0.03 Ohm

BUZ11 PDF, 82.73 KB

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Transistor BUZ11 MOS-N-FET 50 V, 33 A, 90 W, 0.03 Ohm

SKU

4865

Manufacturer / Model

ON SEMICONDUCTOR / BUZ11

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