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Transistor BUZ72 MOS-N-FET 100 V, 10 A, 40 W, 0.2 Ohm

Transistor BUZ72 MOS-N-FET 100 V, 10 A, 40 W, 0.2 Ohm

Transistor BUZ72 MOS-N-FET 100 V, 10 A, 40 W, 0.2 Ohm

Model:

BUZ72

Weight:

0.006 Kgs

Availability

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out of stock

€ 0.46 / 0.90 лв

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SKU: 30849

Specifications Files Reviews

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Specifications

Technical parameters of Transistor BUZ72 MOS-N-FET 100 V, 10 A, 40 W, 0.2 Ohm

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

100 [V]

Maximum drain current:

10 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

0.2 [ohm]

Power Pd:

40 [W]

Housing:

TO-220

Maximum voltage gate-source Ugs:

±20 [V]

Model:

BUZ72

Mounting:

THT

Diode:

no

Files

Technical documentation of Transistor BUZ72 MOS-N-FET 100 V, 10 A, 40 W, 0.2 Ohm

BUZ72 PDF, 93.38 KB

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Transistor BUZ72 MOS-N-FET 100 V, 10 A, 40 W, 0.2 Ohm

SKU

30849

Model

BUZ72

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