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Transistor IRF250 MOS-N-FET 200 V, 30 A, 0.085 Ohm, 150 W

Transistor IRF250 MOS-N-FET 200 V, 30 A, 0.085 Ohm, 150 W

Transistor IRF250 MOS-N-FET 200 V, 30 A, 0.085 Ohm, 150 W

Model:

IRF250

Weight:

0.022 Kgs

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for a total cart value over € 50

Availability

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1 pcs.

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€ 2.19

~~€ 2.58~~

The offer is valid from 20.10.2026 to 20.10.2026

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SKU: 17099

Specifications Files Reviews

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Specifications

Technical parameters of Transistor IRF250 MOS-N-FET 200 V, 30 A, 0.085 Ohm, 150 W

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

200 [V]

Maximum drain current:

30 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

0.085 [ohm]

Power Pd:

150 [W]

Housing:

TO-3

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRF250

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRF250 MOS-N-FET 200 V, 30 A, 0.085 Ohm, 150 W

IRF250 PDF, 219.43 KB

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Category: MOSFET

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Transistor IRF250 MOS-N-FET 200 V, 30 A, 0.085 Ohm, 150 W

SKU

17099

Model

IRF250

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