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Transistor IRFBC30 MOS-N-FET 600 V, 3.6 A, 2.2 Ohm, 74 W

Transistor IRFBC30 MOS-N-FET 600 V, 3.6 A, 2.2 Ohm, 74 W

Transistor IRFBC30 MOS-N-FET 600 V, 3.6 A, 2.2 Ohm, 74 W

Model:

IRFBC30

Weight:

0.006 Kgs

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Availability

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3 pcs.

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-5%

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€ 2.10 / 4.11 лв

~~€ 2.21~~

The offer is valid from 23.04.2026 to 23.04.2026

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SKU: 4886

Specifications Files Reviews

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Specifications

Technical parameters of Transistor IRFBC30 MOS-N-FET 600 V, 3.6 A, 2.2 Ohm, 74 W

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

600 [V]

Maximum drain current:

3.6 [A]

Operating temperature:

-55~175 [°C]

Drain-source resistance at 25°С:

2.2 [ohm]

Power Pd:

74 [W]

Housing:

TO-220AB

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRFBC30

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRFBC30 MOS-N-FET 600 V, 3.6 A, 2.2 Ohm, 74 W

IRFBC30 PDF, 176.95 KB

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Transistor IRFBC30 MOS-N-FET 600 V, 3.6 A, 2.2 Ohm, 74 W

SKU

4886

Model

IRFBC30

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