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Transistor IRF822 MOS-N-FET 500 V, 2.2 A, 4 Оhm, 50 W

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Transistor IRF822 MOS-N-FET 500 V, 2.2 A, 4 Оhm, 50 W

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Price: BGN 1.15 VAT Incl.

Weight: 0.010 Kgs

Quantity: 0

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SKU: 4881

Model: IRF822
Transistor polarity: N-channel
Drain-source breakdown voltage: 500 V
Gate-source breakdown voltage: ±20 V
Drain-source resistance: 4 Ohm
Continuous drain current: 2.2 A
Power: 50 W
Case: TO-220
Mounting: THT

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

500 [V]

Maximum drain current:

2.2 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

4 [ohm]

Power Pd:

50 [W]

Housing:

TO-220

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRF822

Mounting:

THT

Diode:

yes

IRF822 PDF, 326.81 KB

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