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Transistor IRF822 MOS-N-FET 500 V, 2.2 A, 4 Оhm, 50 W

Name: Transistor IRF822 MOS-N-FET 500 V, 2.2 A, 4 Оhm, 50 W
SKU: 4881
Price: 3.36 BGN
Availability: InStock
Rating: 5.0000 (1 reviews)

Model:

IRF822

Weight:

0.010 Kgs

Availability

Qty

Delivery time

In Stock

48 h

Vikiwat Store

shop purchase

In stock

BGN 3.36 VAT Incl.

SKU: 4881

Specifications Files Reviews

Specifications

Technical parameters of Transistor IRF822 MOS-N-FET 500 V, 2.2 A, 4 Оhm, 50 W

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

500 [V]

Maximum drain current:

2.2 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

4 [ohm]

Power Pd:

50 [W]

Housing:

TO-220

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRF822

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRF822 MOS-N-FET 500 V, 2.2 A, 4 Оhm, 50 W

IRF822 PDF, 326.81 KB

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