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Transistor IRF822 MOS-N-FET 500 V, 2.2 A, 4 Оhm, 50 W

Transistor IRF822 MOS-N-FET 500 V, 2.2 A, 4 Оhm, 50 W

Transistor IRF822 MOS-N-FET 500 V, 2.2 A, 4 Оhm, 50 W

Model:

IRF822

Weight:

0.011 Kgs

Availability

Available online

60 pcs.

On site in Vikiwat shop

the price on site may be different

5 pcs.

See quantities

BGN 2.69 VAT Incl.

SKU: 4881

Specifications Files Reviews

Specifications

Technical parameters of Transistor IRF822 MOS-N-FET 500 V, 2.2 A, 4 Оhm, 50 W

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

500 [V]

Maximum drain current:

2.2 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

4 [ohm]

Power Pd:

50 [W]

Housing:

TO-220

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRF822

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRF822 MOS-N-FET 500 V, 2.2 A, 4 Оhm, 50 W

IRF822 PDF, 326.81 KB

Reviews

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