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Transistor IRFP350 MOS-N-FET 400 V, 16 A, 0.3 Ohm, 190 W

Transistor IRFP350 MOS-N-FET 400 V, 16 A, 0.3 Ohm, 190 W

Transistor IRFP350 MOS-N-FET 400 V, 16 A, 0.3 Ohm, 190 W.

Model:

IRFP350

Weight:

0.006 Kgs

Availability

Available online

30 pcs.

On site in Vikiwat shop

the price on site may be different

10 pcs.

See quantities

BGN 4.98 VAT Incl.

SKU: 13368

Specifications Files Reviews

Specifications

Technical parameters of Transistor IRFP350 MOS-N-FET 400 V, 16 A, 0.3 Ohm, 190 W

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

400 [V]

Maximum drain current:

16 [A]

Operating temperature:

-55~175 [°C]

Drain-source resistance at 25°С:

0.3 [ohm]

Power Pd:

190 [W]

Housing:

TO-247AC

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRFP350

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRFP350 MOS-N-FET 400 V, 16 A, 0.3 Ohm, 190 W

Technical data [EN] PDF, 165.06 KB

Reviews

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