Free delivery with Speedy within Bulgaria for online orders over BGN 150Incl. VAT / up to 30 kg.

EN

Products

Your cart is empty

Transistor IRFP350 MOS-N-FET 400 V, 16 A, 0.3 Ohm, 190 W

Transistor IRFP350 MOS-N-FET 400 V, 16 A, 0.3 Ohm, 190 W

Transistor IRFP350 MOS-N-FET 400 V, 16 A, 0.3 Ohm, 190 W.

Model:

IRFP350

Weight:

0.006 Kgs

Availability

Available online

18 pcs.

On site in Vikiwat shop

the price on site may be different

10 pcs.

See quantities

-10%

online

BGN 4.48 / 2.29 €

~~BGN 4.98~~

The offer is valid from 26.08.2025 to 26.08.2025

SKU: 13368

Specifications Files Reviews

Specifications

Technical parameters of Transistor IRFP350 MOS-N-FET 400 V, 16 A, 0.3 Ohm, 190 W

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

400 [V]

Maximum drain current:

16 [A]

Operating temperature:

-55~175 [°C]

Drain-source resistance at 25°С:

0.3 [ohm]

Power Pd:

190 [W]

Housing:

TO-247AC

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRFP350

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRFP350 MOS-N-FET 400 V, 16 A, 0.3 Ohm, 190 W

Technical data [EN] PDF, 165.06 KB

Reviews

In order to write a review or rate this product you must be a registered user.