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Transistor IRF830 MOS-N-FET 500 V, 5.9 A, 1.5 Оhm, 125 W

Transistor IRF830 MOS-N-FET 500 V, 5.9 A, 1.5 Оhm, 125 W

Transistor IRF830 MOS-N-FET 500 V, 5.9 A, 1.5 Оhm, 125 W

Model:

IRF830

Weight:

0.011 Kgs

Availability

Available online

24 pcs.

On site in Vikiwat shop

the price on site may be different

3 pcs.

See quantities

BGN 2.64 VAT Incl.

Prices for quantities (VAT Incl.)

1+

BGN 2.64

5+

BGN 2.51

10+

BGN 2.38

25+

BGN 2.24

50+

BGN 2.11

SKU: 4882

Specifications Files Reviews

Specifications

Technical parameters of Transistor IRF830 MOS-N-FET 500 V, 5.9 A, 1.5 Оhm, 125 W

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

500 [V]

Maximum drain current:

5.9 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

1.5 [ohm]

Power Pd:

125 [W]

Housing:

TO-220

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRF830

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRF830 MOS-N-FET 500 V, 5.9 A, 1.5 Оhm, 125 W

IRF830 PDF, 60.67 KB

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