Free delivery with Speedy within Bulgaria over € 75 / up to 30 kg.

EN

Products

Your cart is empty

Transistor IRF830 MOS-N-FET 500 V, 5.9 A, 1.5 Оhm, 125 W

Transistor IRF830 MOS-N-FET 500 V, 5.9 A, 1.5 Оhm, 125 W

Transistor IRF830 MOS-N-FET 500 V, 5.9 A, 1.5 Оhm, 125 W

Model:

IRF830

Weight:

0.011 Kgs

Availability

Available online

9 pcs.

On site in Vikiwat shop

the price on site may be different

3 pcs.

See quantities

€ 1.35 / 2.64 лв

SKU: 4882

Specifications Files Reviews

Report an error

Specifications

Technical parameters of Transistor IRF830 MOS-N-FET 500 V, 5.9 A, 1.5 Оhm, 125 W

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

500 [V]

Maximum drain current:

5.9 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

1.5 [ohm]

Power Pd:

125 [W]

Housing:

TO-220

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRF830

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRF830 MOS-N-FET 500 V, 5.9 A, 1.5 Оhm, 125 W

IRF830 PDF, 60.67 KB

Reviews

In order to write a review or rate this product you must be a registered user.

Thank you for helping us improve your user experience on our site.

Transistor IRF830 MOS-N-FET 500 V, 5.9 A, 1.5 Оhm, 125 W

SKU

4882

Model

IRF830

Please indicate the error you encountered.

Technical characteristics

Product description

Product image

Technical documentation (files)

Other

Your comment Your email address *

Antispam verification: