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Transistor IRF830 MOS-N-FET 500 V, 5.9 A, 1.5 Оhm, 125 W

Name: Transistor IRF830 MOS-N-FET 500 V, 5.9 A, 1.5 Оhm, 125 W
SKU: 4882
Price: 3.30 BGN
Availability: InStock
Rating: 4.0000 (1 reviews)

Model:

IRF830

Weight:

0.010 Kgs

Availability

Qty

Delivery time

In Stock

48 h

Vikiwat Store

shop purchase

In stock

BGN 3.30 VAT Incl.

Prices for quantities (VAT Incl.)

Quantity	1+	5+	10+	25+	50+
List Price	BGN 3.30	BGN 3.14	BGN 2.97	BGN 2.81	BGN 2.64

SKU: 4882

Specifications Files Reviews

Specifications

Technical parameters of Transistor IRF830 MOS-N-FET 500 V, 5.9 A, 1.5 Оhm, 125 W

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

500 [V]

Maximum drain current:

5.9 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

1.5 [ohm]

Power Pd:

125 [W]

Housing:

TO-220

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRF830

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRF830 MOS-N-FET 500 V, 5.9 A, 1.5 Оhm, 125 W

IRF830 PDF, 60.67 KB

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