Free delivery with Speedy within Bulgaria to address or office over € 75 (up to 30 kg) • to APS over € 50 ^new

EN

Products

Your cart is empty

Transistor IRFB31N20D, MOS-N-FET, 200 V, 31 A, 0.082 Ohm, 200 W

Transistor IRFB31N20D, MOS-N-FET, 200 V, 31 A, 0.082 Ohm, 200 W

Transistor IRFB31N20D, MOS-N-FET, 200 V, 31 A, 0.082 Ohm, 200 W

Manufacturer:

INTERNATIONAL RECTIFIER

Model:

IRFB31N20DPBF

Weight:

0.006 Kgs

Availability

Out of stock online

On site in Vikiwat shop

the price on site may be different

out of stock

Possible speedy APS

€ 2.51 / 4.91 лв

Notify me when available Close

Notify me when the product is available

SKU: 7771

Specifications Files Reviews

Report an error

Specifications

Technical parameters of Transistor IRFB31N20D, MOS-N-FET, 200 V, 31 A, 0.082 Ohm, 200 W

Brand:

INTERNATIONAL RECTIFIER

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

200 [V]

Maximum drain current:

31 [A]

Operating temperature:

-55~175 [°C]

Drain-source resistance at 25°С:

0.082 [ohm]

Power Pd:

200 [W]

Housing:

TO-220AB

Maximum voltage gate-source Ugs:

±30 [V]

Model:

IRFB31N20DPBF

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRFB31N20D, MOS-N-FET, 200 V, 31 A, 0.082 Ohm, 200 W

IRFB31N20D PDF, 193.45 KB

Reviews

In order to write a review or rate this product you must be a registered user.

Thank you for helping us improve your user experience on our site.

Transistor IRFB31N20D, MOS-N-FET, 200 V, 31 A, 0.082 Ohm, 200 W

SKU

7771

Manufacturer / Model

INTERNATIONAL RECTIFIER / IRFB31N20DPBF

Please indicate the error you encountered.

Technical characteristics

Product description

Product image

Technical documentation (files)

Other

Your comment Your email address *

Antispam verification:

Recently viewed products

Irretentive Micro Switch NO, SPST, THT

Delete recently viewed