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Transistor IRFB31N20D, MOS-N-FET, 200 V, 31 A, 0.082 Ohm, 200 W

Transistor IRFB31N20D, MOS-N-FET, 200 V, 31 A, 0.082 Ohm, 200 W

Transistor IRFB31N20D, MOS-N-FET, 200 V, 31 A, 0.082 Ohm, 200 W

Manufacturer:

INTERNATIONAL RECTIFIER

Model:

IRFB31N20DPBF

Weight:

0.006 Kgs

Availability

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€ 2.51 / 4.91 лв

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SKU: 7771

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Specifications

Technical parameters of Transistor IRFB31N20D, MOS-N-FET, 200 V, 31 A, 0.082 Ohm, 200 W

Brand:

INTERNATIONAL RECTIFIER

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

200 [V]

Maximum drain current:

31 [A]

Operating temperature:

-55~175 [°C]

Drain-source resistance at 25°С:

0.082 [ohm]

Power Pd:

200 [W]

Housing:

TO-220AB

Maximum voltage gate-source Ugs:

±30 [V]

Model:

IRFB31N20DPBF

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRFB31N20D, MOS-N-FET, 200 V, 31 A, 0.082 Ohm, 200 W

IRFB31N20D PDF, 193.45 KB

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Transistor IRFB31N20D, MOS-N-FET, 200 V, 31 A, 0.082 Ohm, 200 W

SKU

7771

Manufacturer / Model

INTERNATIONAL RECTIFIER / IRFB31N20DPBF

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