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Transistor IRF610PBF MOS-N-FET 200 V, 3.3 A, 36 W TO220

Transistor IRF610PBF MOS-N-FET 200 V, 3.3 A, 36 W TO220

Transistor IRF610PBF MOS-N-FET 200 V, 3.3 A, 36 W TO220

Manufacturer:

VISHAY

Model:

IRF610

Weight:

0.002 Kgs

Availability

Out of stock online

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€ 1.28

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SKU: 5046

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Specifications

Technical parameters of Transistor IRF610PBF MOS-N-FET 200 V, 3.3 A, 36 W TO220

Brand:

VISHAY

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

200 [V]

Maximum drain current:

2.1 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

1.5 [ohm]

Power Pd:

36 [W]

Housing:

TO-220AB

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRF610

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRF610PBF MOS-N-FET 200 V, 3.3 A, 36 W TO220

IRF610PBF PDF, 153.84 KB

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Transistor IRF610PBF MOS-N-FET 200 V, 3.3 A, 36 W TO220

SKU

5046

Manufacturer / Model

VISHAY / IRF610

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