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Transistor IRF630 MOS-N-FET 200 V, 9 A, 0.4 Ohm, 88 W

Transistor IRF630 MOS-N-FET 200 V, 9 A, 0.4 Ohm, 88 W

Transistor IRF630 MOS-N-FET 200 V, 9 A, 0.4 Ohm, 88 W

Model:

IRF630

Weight:

0.011 Kgs

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for a total cart value over € 50

Availability

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923 pcs.

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€ 1.15 / 2.25 лв

~~€ 1.28~~

The offer is valid from 13.05.2026 to 13.05.2026

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SKU: 4890

Specifications Files Reviews

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Specifications

Technical parameters of Transistor IRF630 MOS-N-FET 200 V, 9 A, 0.4 Ohm, 88 W

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

200 [V]

Maximum drain current:

9 [A]

Operating temperature:

-55~175 [°C]

Drain-source resistance at 25°С:

0.4 [ohm]

Power Pd:

88 [W]

Housing:

TO-220AB

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRF630

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRF630 MOS-N-FET 200 V, 9 A, 0.4 Ohm, 88 W

IRF630 PDF, 100.16 KB

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Transistor IRF630 MOS-N-FET 200 V, 9 A, 0.4 Ohm, 88 W

SKU

4890

Model

IRF630

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