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Transistor IRF630 MOS-N-FET 200 V, 9 A, 0.4 Ohm, 88 W

Transistor IRF630 MOS-N-FET 200 V, 9 A, 0.4 Ohm, 88 W

Transistor IRF630 MOS-N-FET 200 V, 9 A, 0.4 Ohm, 88 W

Model:

IRF630

Weight:

0.011 Kgs

Availability

Available online

637 pcs.

On site in Vikiwat shop

the price on site may be different

out of stock

See quantities

BGN 2.02 VAT Incl.

Prices for quantities (VAT Incl.)

1+

BGN 2.02

3+

BGN 1.82

5+

BGN 1.72

10+

BGN 1.62

25+

BGN 1.41

SKU: 4890

Specifications Files Reviews

Specifications

Technical parameters of Transistor IRF630 MOS-N-FET 200 V, 9 A, 0.4 Ohm, 88 W

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

200 [V]

Maximum drain current:

9 [A]

Operating temperature:

-55~175 [°C]

Drain-source resistance at 25°С:

0.4 [ohm]

Power Pd:

88 [W]

Housing:

TO-220AB

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRF630

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRF630 MOS-N-FET 200 V, 9 A, 0.4 Ohm, 88 W

IRF630 PDF, 100.16 KB

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