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Transistor IRF630 MOS-N-FET 200 V, 9 A, 0.4 Ohm, 88 W

Name: Transistor IRF630 MOS-N-FET 200 V, 9 A, 0.4 Ohm, 88 W
SKU: 4890
Price: 2.53 BGN
Availability: InStock
Rating: 4.0000 (1 reviews)

Model:

IRF630

Weight:

0.010 Kgs

Availability

Qty

Delivery time

In Stock

48 h

Vikiwat Store

shop purchase

In stock

BGN 2.53 VAT Incl.

Prices for quantities (VAT Incl.)

Quantity	1+	3+	5+	10+	25+
List Price	BGN 2.53	BGN 2.28	BGN 2.15	BGN 2.02	BGN 1.77

SKU: 4890

Specifications Files Reviews

Specifications

Technical parameters of Transistor IRF630 MOS-N-FET 200 V, 9 A, 0.4 Ohm, 88 W

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

200 [V]

Maximum drain current:

9 [A]

Operating temperature:

-55~175 [°C]

Drain-source resistance at 25°С:

0.4 [ohm]

Power Pd:

88 [W]

Housing:

TO-220AB

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRF630

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRF630 MOS-N-FET 200 V, 9 A, 0.4 Ohm, 88 W

IRF630 PDF, 100.16 KB

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