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Transistor IRF640NPBF, N-MOSFET, 0.15ohm, 200V, 18A, -55~175°C, 150W, TO220AB, ±20V

Transistor IRF640NPBF - 1

Transistor N-MOSFET - 2

Transistor 0.15ohm 200V 18A -55~175°C 150W TO220AB ±20V - 3

Transistor IRF640NPBF with N-MOSFET technology, maximum 200 V drain-source voltage and 18 A coil current in a TO220AB standard housing.

Manufacturer:

INFINEON

Model:

IRF640NPBF

Weight:

0.011 Kgs

Availability

Available online

658 pcs.

On site in Vikiwat shop

the price on site may be different

5 pcs.

See quantities

-5%

online

BGN 3.03 VAT Incl.

~~BGN 3.19~~ VAT Incl.

The offer is valid from 31.05.2025 to 31.05.2025

Prices for quantities (VAT Incl.)

1+

BGN 3.03

~~BGN 3.19~~

3+

BGN 2.73

~~BGN 2.87~~

5+

BGN 2.58

~~BGN 2.71~~

10+

BGN 2.27

~~BGN 2.39~~

25+

BGN 1.82

~~BGN 1.91~~

SKU: 4894

Specifications Files Reviews

Specifications

Technical parameters of Transistor IRF640NPBF, N-MOSFET, 0.15ohm, 200V, 18A, -55~175°C, 150W, TO220AB, ±20V

Brand:

INFINEON

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

200 [V]

Maximum drain current:

18 [A]

Operating temperature:

-55~175 [°C]

Drain-source resistance at 25°С:

0.15 [ohm]

Power Pd:

150 [W]

Housing:

TO220AB

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRF640NPBF

Mounting:

THT

Diode:

no

Files

Technical documentation of Transistor IRF640NPBF, N-MOSFET, 0.15ohm, 200V, 18A, -55~175°C, 150W, TO220AB, ±20V

Datasheet IRF640NPBF (EN) PDF, 243.4 KB

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