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Transistor IRFP044N MOS-N-FET 60 V, 57 A, 0.028 Ohm, 180 W

Transistor IRFP044N MOS-N-FET 60 V, 57 A, 0.028 Ohm, 180 W

Transistor IRFP044N MOS-N-FET 60 V, 57 A, 0.028 Ohm, 180 W

Manufacturer:

INTERNATIONAL RECTIFIER

Model:

IRFP044

Weight:

0.006 Kgs

Availability

Out of stock online

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out of stock

€ 2.82 / 5.52 лв

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SKU: 15811

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Specifications

Technical parameters of Transistor IRFP044N MOS-N-FET 60 V, 57 A, 0.028 Ohm, 180 W

Brand:

INTERNATIONAL RECTIFIER

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

60 [V]

Maximum drain current:

57 [A]

Operating temperature:

-55~175 [°C]

Drain-source resistance at 25°С:

0.028 [ohm]

Power Pd:

180 [W]

Housing:

TO-247AC

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRFP044

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRFP044N MOS-N-FET 60 V, 57 A, 0.028 Ohm, 180 W

IRFP044 PDF, 174.12 KB

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Transistor IRFP044N MOS-N-FET 60 V, 57 A, 0.028 Ohm, 180 W

SKU

15811

Manufacturer / Model

INTERNATIONAL RECTIFIER / IRFP044

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