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Transistor IRFS630 MOS-N-FET 200 V, 5.9 A, 35 W

Transistor IRFS630 MOS-N-FET 200 V, 5.9 A, 35 W

Transistor IRFS630 MOS-N-FET with drain-source voltage 200 V, drain current 5.9 A and power 35 W.

Model:

IRFS630A

Weight:

0.011 Kgs

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for a total cart value over € 50

Availability

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3 pcs.

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€ 0.85 / 1.66 лв

~~€ 0.92~~

The offer is valid from 05.08.2026 to 05.08.2026

Buy on installment with tbi bank

for a total cart value over € 50

SKU: 4889

Specifications Files Reviews

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Specifications

Technical parameters of Transistor IRFS630 MOS-N-FET 200 V, 5.9 A, 35 W

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

200 [V]

Maximum drain current:

5.9 [A]

Operating temperature:

-55~150 [°C]

Drain-source resistance at 25°С:

0.4 [ohm]

Power Pd:

35 [W]

Housing:

TO-220F

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRFS630A

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRFS630 MOS-N-FET 200 V, 5.9 A, 35 W

Technical data and drawing (EN) PDF, 279.79 KB

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Transistor IRFS630 MOS-N-FET 200 V, 5.9 A, 35 W

SKU

4889

Model

IRFS630A

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