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Transistor IRFP260 N MOS-FET 200 V, 50 A, 0.04 Ohm, 300 W

Transistor IRFP260 N MOS-FET 200 V, 50 A, 0.04 Ohm, 300 W

Transistor IRFP260 N MOS-FET 200 V, 50 A, 0.04 Ohm, 300 W.

Manufacturer:

INTERNATIONAL RECTIFIER

Model:

IRFP260

Weight:

0.006 Kgs

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for a total cart value over € 50

Availability

Available online

157 pcs.

On site in Vikiwat shop

the price on site may be different

8 pcs.

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Possible speedy APS

€ 5.06 / 9.90 лв

Buy on installment with tbi bank

for a total cart value over € 50

SKU: 5668

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Specifications

Technical parameters of Transistor IRFP260 N MOS-FET 200 V, 50 A, 0.04 Ohm, 300 W

Brand:

INTERNATIONAL RECTIFIER

Transistor type:

N-MOSFET

Maximum voltage drain-source Uds:

200 [V]

Maximum drain current:

50 [A]

Operating temperature:

-55~175 [°C]

Drain-source resistance at 25°С:

0.04 [ohm]

Power Pd:

300 [W]

Housing:

TO-247AC

Maximum voltage gate-source Ugs:

±20 [V]

Model:

IRFP260

Mounting:

THT

Diode:

yes

Files

Technical documentation of Transistor IRFP260 N MOS-FET 200 V, 50 A, 0.04 Ohm, 300 W

Technical Data (EN) PDF, 122.63 KB

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Transistor IRFP260 N MOS-FET 200 V, 50 A, 0.04 Ohm, 300 W

SKU

5668

Manufacturer / Model

INTERNATIONAL RECTIFIER / IRFP260

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